T
TSMR™-V90
Substrate
Si (HMDS)
Film Thickness
1.25μm
Pre-bake
100℃, 60sec
Exposure
120℃, 90sec
Development
NMD-3 2.38%,
23℃, 60sec
P.E.B
120℃, 90sec
OK 高分辨率的i -line 正胶 TDMR-AR80 HP 6CP
厚度 :0.65um~1.5um;
分辨率可做到0.22um;
Substrate
BARC
Film Thickness
430nm(R.I.:1.56@633nm)
Pre-bake
90℃, 60sec
Exposure
KrF stepper (NA: 0.75, σ: 2/3 annular)
Mask
TOK Reticle (HT 6%)
P.E.B
110℃, 60s
Development
NMD-3 2.38%, 60s, Paddle